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Implementation of memory stacking on logic controller by using 3DIC 300mm backside TSV process integration
- Source :
- 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
- Publication Year :
- 2016
- Publisher :
- IEEE, 2016.
-
Abstract
- Technologies of backside via-last TSV (BTSV) 3DIC 300mm process integration are developed to be applied in industry cooperation and mass production business model view. In this work, a successful BTSV process integration is disclosed and applied on 65nm logic controller/45nm DRAM stacking structure. Key enabling process technologies in BTSV formation and thin wafer handling are discussed. The electrical measurement data and functional logic circuit test show the practicability of BTSV integration.
- Subjects :
- Structure (mathematical logic)
Engineering
business.industry
Controller (computing)
Stacking
Process (computing)
02 engineering and technology
021001 nanoscience & nanotechnology
Logic gate
Process integration
0202 electrical engineering, electronic engineering, information engineering
Electronic engineering
020201 artificial intelligence & image processing
Wafer
0210 nano-technology
business
Dram
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
- Accession number :
- edsair.doi...........d926072c3831fcc4e2c6ec8d4ee19f8d