Electrodeposition of CuInTe2 film from an acidic solution

Copper–indium–telluride films were electrochemically deposited from solutions containing CuCl 2 , InCl 3 , TeO 2 and HCl. Although a flat and smooth film with closely stoichiometric composition was deposited at −660 mV vs. Ag/AgCl at 303 K from a solution of 2.5×10 −4 mol dm −3 CuCl 2 , 1.0×10 −2 mol dm −3 InCl 3 , 5.0×10 −4 mol dm −3 TeO 2 and 0.1 mol dm −3 HCl, a polycrystalline CuInTe 2 film was not obtained. Increasing the temperature from 303 to 363 K allowed the deposition at lower overpotential of a polycrystalline CuInTe 2 film with closely stoichiometric composition and increased indium content. The band gap of the polycrystalline CuInTe 2 film electrodeposited at 363 K at −660 mV was 0.98 eV.