Random Telegraph Noise Nano-spectroscopy in High-κ Dielectrics Using Scanning Probe Microscopy Techniques

In this chapter, we summarize the recent developments in scanning probe microscopy techniques to isolate individual defects and characterize them using random telegraph noise (RTN) signatures, considering HfO2 high-κ dielectric as the material of interest. The chapter also provides an overview on the challenges associated with the existing probe station-based device-level RTN spectroscopy and the potential for the conductive atomic force microscopy (CAFM) and scanning tunneling microscopy (STM) technique to effectively address some of these challenges. As a proof of concept, we have demonstrated the application of CAFM and STM for the measurement of spatially resolved RTN spectra from grain and grain boundaries in HfO2, which provides an opportunity to directly correlate the electrical defects at the microstructural sites to their specific noise contributions.