Aluminum-doped zinc oxide thin films grown on various substrates using facing target sputtering system

Aluminum-doped zinc oxide (AZO) films were fabricated on various substrates, such as glass, polyethylene naphthalate (PEN), and polyethylene terephthalate (PET), at room temperature using a facing target sputtering (FTS) system with hetero ZnO and Al 2 O 3 targets, and their electrical and optical properties were investigated. The AZO film on glass exhibited compressive stress while the films on the plastic substrates showed tensile stress. These stresses negatively affected the crystalline quality of the AZO films, and it is suggested that the poor crystalline quality of the films may be related to the neutral Al-based defect complexes formed in the films; these complexes act as neutral impurity scattering centers. AZO films with good optoelectronic properties could be formed on the glass and plastic substrates by the FTS technique using the hetero targets. The AZO films deposited on the glass, PEN, and PET substrates showed very low resistivities, of 5.0 × 10 −4 Ω cm, 7.0 × 10 −4 Ω cm, and 7.4 × 10 −4 Ω cm, respectively. Further, the figure merit of the AZO film formed on the PEN substrate in the visible range (400–700 nm) was significantly higher than that of the AZO film on PET and similar to that of the AZO film on glass. Finally, the average transmittances of the films in the visible range (400–700 nm) were 83.16% (on glass), 76.3% (on PEN), and 78.16% (on PET).