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(Invited) MOS Interface Control of High Mobility Channel Materials for Realizing Ultrathin EOT Gate Stacks
- Source :
- ECS Transactions. 50:107-122
- Publication Year :
- 2013
- Publisher :
- The Electrochemical Society, 2013.
-
Abstract
- One of the most critical issues for Ge/III-V MOSFETs is gate insulator formation. In this paper, we focus on viable Ge/III-V MOS gate stack technologies realizing the requirements of MOS interface quality and thin equivalent oxide thickness (EOT). these requirements. As for Ge gate stacks, we present a ultrathin EOT Al2O3/GeOx/Ge gate stack fabricated by a plasma post oxidation method and pMOSFETs using this gate stack. (100) Ge pMOSFETs using GeOx/Ge MOS interfaces is demonstrated with EOT down to 0.98 nm and high hole peak mobility of 401 cm2/Vs. As for InGaAs gate stacks, we show the impact of Al2O3 inter-layers on interface properties of HfO2/InGaAs MOS interfaces. The 1-nm-thick capacitance equivalent thickness (CET) in the HfO2/Al2O3/InGaAs MOS capacitors is realized with good interface properties and low gate leakage of 2.4e-2 A/cm2.
Details
- ISSN :
- 19386737 and 19385862
- Volume :
- 50
- Database :
- OpenAIRE
- Journal :
- ECS Transactions
- Accession number :
- edsair.doi...........d78546697a724c60d4ac84dd2ddf0c30