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Atomic layer etching of germanium
- Source :
- Applied Surface Science. 112:87-91
- Publication Year :
- 1997
- Publisher :
- Elsevier BV, 1997.
-
Abstract
- Atomic layer etching of Ge has been investigated experimentally based on the surface chemistry that Cl can adsorb on the clean Ge surface at room temperature and desorb thermally as GeCl 2 at high temperatures. The ideal etching rate of one monolayer per cycle has been achieved. The critical Cl 2 dosage for the saturated etching rate was about 7.2×10 6 L. Increase of the surface roughness after etching of 100 cycles was about 3.5 monolayers.
- Subjects :
- Analytical chemistry
General Physics and Astronomy
chemistry.chemical_element
Germanium
Surfaces and Interfaces
General Chemistry
Condensed Matter Physics
Isotropic etching
Surfaces, Coatings and Films
chemistry
Etching (microfabrication)
Monolayer
Surface roughness
Dry etching
Reactive-ion etching
Layer (electronics)
Subjects
Details
- ISSN :
- 01694332
- Volume :
- 112
- Database :
- OpenAIRE
- Journal :
- Applied Surface Science
- Accession number :
- edsair.doi...........d748e47919ac267457bf6636761c3442