High voltage lateral MOS thyristor cascode switch on SOI-safe operating area of SOI-Resurf devices

Authors :: Akio C O Patent Divis Nakagawa
Hideyuki Funaki
Norio Yasuhara
Source :: 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.
Publication Year :: 2002
Publisher :: IEEE, 2002.
Abstract: A high voltage lateral MOS thyristor cascode switch on SOI was proposed. It consists of a high voltage MOS thyristor, a low voltage MOSFET and a pn diode. Excellent on-state and switching characteristics were numerically and experimentally obtained. The safe operating area (SOA) of SOI-Resurf devices were discussed.

Subjects :: Gate turn-off thyristor
Materials science
business.industry
Electrical engineering
Thyristor
High voltage
Hardware_PERFORMANCEANDRELIABILITY
MOS-controlled thyristor
Integrated gate-commutated thyristor
Safe operating area
Hardware_INTEGRATEDCIRCUITS
Cascode
business
Low voltage
Hardware_LOGICDESIGN

Database :: OpenAIRE
Journal :: 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings
Accession number :: edsair.doi...........d72918439ee00ebb7ae7c46a430fae1f
Full Text :: https://doi.org/10.1109/ispsd.1996.509458

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