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Efficient molecular doping of polymeric semiconductors driven by anion exchange

Authors :
Junto Tsurumi
Tadanori Kurosawa
Yu Yamashita
Toshihiro Okamoto
Masahiro Ohno
Shohei Kumagai
Ryo Fujimoto
Jun Takeya
Shun Watanabe
Source :
Nature. 572:634-638
Publication Year :
2019
Publisher :
Springer Science and Business Media LLC, 2019.

Abstract

The efficiency with which polymeric semiconductors can be chemically doped—and the charge carrier densities that can thereby be achieved—is determined primarily by the electrochemical redox potential between the π-conjugated polymer and the dopant species1,2. Thus, matching the electron affinity of one with the ionization potential of the other can allow effective doping3,4. Here we describe a different process—which we term ‘anion exchange’—that might offer improved doping levels. This process is mediated by an ionic liquid solvent and can be pictured as the effective instantaneous exchange of a conventional small p-type dopant anion with a second anion provided by an ionic liquid. The introduction of optimized ionic salt (the ionic liquid solvent) into a conventional binary donor–acceptor system can overcome the redox potential limitations described by Marcus theory5, and allows an anion-exchange efficiency of nearly 100 per cent. As a result, doping levels of up to almost one charge per monomer unit can be achieved. This demonstration of increased doping levels, increased stability and excellent transport properties shows that anion-exchange doping, which can use an almost infinite selection of ionic salts, could be a powerful tool for the realization of advanced molecular electronics. The limitations of conventional chemical doping of polymeric semiconductors can be overcome by adding a second ionic species into the system, leading to enhanced doping, electrical conductivity and stability.

Details

ISSN :
14764687 and 00280836
Volume :
572
Database :
OpenAIRE
Journal :
Nature
Accession number :
edsair.doi...........d6ed86899c441437088710172ae98603
Full Text :
https://doi.org/10.1038/s41586-019-1504-9