Growth of In1−xTlxSb, a new infrared material, by low‐pressure metalorganic chemical vapor deposition

We report the growth of In1−xTlxSb, a new III‐V alloy for long‐wavelength infrared detector applications, by low‐pressure metalorganic chemical vapor deposition. In1−xTlxSb with good surface morphology was obtained on both GaAs and InSb substrates at a growth temperature of 455 °C. X‐ray diffraction measurements showed resolved peaks of In1−xTlxSb and InSb films. Infrared absorption spectrum of In1−xTlxSb showed a shift toward lower energies compared to InSb spectrum. Hall mobility data on In1−xTlxSb/InSb/GaAs structure showed enhanced mobility at low temperatures compared to InSb/GaAs structure.