Back to Search
Start Over
Homogeneous in-plane WSe2 P–N junctions for advanced optoelectronic devices
- Source :
- Nanoscale. 15:4940-4950
- Publication Year :
- 2023
- Publisher :
- Royal Society of Chemistry (RSC), 2023.
-
Abstract
- Through selective plasma doping, the in situ construction of homogeneous lateral WSe2 P–N junctions within a single WSe2 flake is achieved. Our device shows an external quantum efficiency of ∼228% and a high photoresponsivity of ∼7.1 × 104 mA W−1.
- Subjects :
- General Materials Science
Subjects
Details
- ISSN :
- 20403372 and 20403364
- Volume :
- 15
- Database :
- OpenAIRE
- Journal :
- Nanoscale
- Accession number :
- edsair.doi...........d6d4cbd90c1652d5f6005652d7996459