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Bandgap tuning of mono- and bilayer graphene doped with group IV elements
- Source :
- Journal of Applied Physics. 113:183701
- Publication Year :
- 2013
- Publisher :
- AIP Publishing, 2013.
-
Abstract
- We report density functional theory band structure calculations of graphene doped with group IV elements. A bandgap as high as 2.13 eV is calculated for a single layer of graphene doped with Si while Ge and Sn doping reduce this bandgap for equal doping concentrations. Bilayers of doped graphene are also studied and it is found that the bandgap of these materials is less than that of the single layer counterparts. Finally, a transverse electric field is applied to the doped bilayers and it is found that the bandgap is inversely proportional to the electric field strength in contrast to what has been observed in the case of pristine bilayers. Carrier effective masses were calculated and in general the effective masses of electrons and holes are found to be similar.
- Subjects :
- Materials science
Condensed matter physics
Condensed Matter::Other
Graphene
Band gap
Doping
Physics::Optics
General Physics and Astronomy
Nanotechnology
law.invention
Condensed Matter::Materials Science
Effective mass (solid-state physics)
law
Condensed Matter::Superconductivity
Electric field
Monolayer
Condensed Matter::Strongly Correlated Electrons
Bilayer graphene
Electronic band structure
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 113
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........d6b7a0deeb981e8f2238ef9ef256536f