Electron scattering in Ge metal-oxide-semiconductor field-effect transistors

The electron mobility of n-channel metal-oxide-semiconductor field-effect transistors using Ge/GeO2/Al2O3 gate stack on (001) Ge substrates is analyzed theoretically and experimentally. Phonon scattering, Coulomb scattering, and interface roughness scattering are taken into account. The Ge peak mobility exceeding Si universal in our device by a factor of 1.3 is due to the reduction of Coulomb scattering of the interface states. As compared to Si, the faster roll-off of the Ge mobility at the effective field larger than 0.3 MV/cm is due to larger interface roughness scattering.