Back to Search
Start Over
Estimation of Radiation Damage and Pattern Resolution in Ion Direct Writing Using Scattering of Low Energetic Ions
- Source :
- Japanese Journal of Applied Physics. 26:531
- Publication Year :
- 1987
- Publisher :
- IOP Publishing, 1987.
-
Abstract
- An estimation of the radiation damage and pattern resolution in ion direct writing is presented by a Monte Carlo simulation of the slowing down and scattering of low-energy ions and recoiled atoms in an amorphous target. The simulation program is characterized by employing the power of a logarithm approximation as a screening function, the distance between collisions and a modified step length based on a binary collision model. Calculated results are in terms of radiation damage depth and fine pattern resolution using sputtering and radiation damage as a semiconductor fabrication technique. Consequently, available informations can be obtained as ion lithography using sputtering and radiation damage that has a much finer pattern resolution (less than a few 10s Å) than electron beam lithography using a latent resust image.
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 26
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........d61df94a908ac3e2a3c466c20e95b459
- Full Text :
- https://doi.org/10.1143/jjap.26.531