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Estimation of Radiation Damage and Pattern Resolution in Ion Direct Writing Using Scattering of Low Energetic Ions

Authors :
Hifumi Tamura
Tohru Ishitani
Sumio Hosaka
Source :
Japanese Journal of Applied Physics. 26:531
Publication Year :
1987
Publisher :
IOP Publishing, 1987.

Abstract

An estimation of the radiation damage and pattern resolution in ion direct writing is presented by a Monte Carlo simulation of the slowing down and scattering of low-energy ions and recoiled atoms in an amorphous target. The simulation program is characterized by employing the power of a logarithm approximation as a screening function, the distance between collisions and a modified step length based on a binary collision model. Calculated results are in terms of radiation damage depth and fine pattern resolution using sputtering and radiation damage as a semiconductor fabrication technique. Consequently, available informations can be obtained as ion lithography using sputtering and radiation damage that has a much finer pattern resolution (less than a few 10s Å) than electron beam lithography using a latent resust image.

Details

ISSN :
13474065 and 00214922
Volume :
26
Database :
OpenAIRE
Journal :
Japanese Journal of Applied Physics
Accession number :
edsair.doi...........d61df94a908ac3e2a3c466c20e95b459
Full Text :
https://doi.org/10.1143/jjap.26.531