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Defect Repair Techniques For X-Ray Masks

Authors :
D K Atwood
G J Fisanick
A Wagner
W A Johnson
Source :
SPIE Proceedings.
Publication Year :
1984
Publisher :
SPIE, 1984.

Abstract

Low defect density masks are necessary to obtain the high chip yields required in VLSI technology. This paper will outline the boron nitride mask fabrication process that has been developed at AT&T Bell Laboratories, and discuss the nature and distribution of normally encountered defects. The advantages and disadvantages of various repair techniques will be addressed and specific examples of repairs made on silicon integrated circuit X-ray masks will be shown.

Details

ISSN :
0277786X
Database :
OpenAIRE
Journal :
SPIE Proceedings
Accession number :
edsair.doi...........d5c067bcb7675c692d62b559897daf0a
Full Text :
https://doi.org/10.1117/12.942340