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A Humidity-Insensitive NO2 Gas Sensor With High Selectivity
- Source :
- IEEE Electron Device Letters. 37:92-95
- Publication Year :
- 2016
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2016.
-
Abstract
- Gas sensors based on semiconductor–metal–oxide nanomaterial have recently emerged due to their advantages of offering large surface to volume ratio. Unfortunately, these sensors are vulnerable to environmental humidity and lack of selectivity when exposed to common gases in air. In this letter, a novel morphology of ZnO nanomaterial is proposed for fabricating NO2 gas sensor through our customized vapor trapping chemical vapor deposition process. By operating the fabricated gas sensors at the room temperature, high sensing performance, including a large output response of 11.06 and a short response/recovery time of 107/124 s, is achieved for 20-ppm NO2. Moreover, the sensor response remains stable under humid environment up to 76%RH. In addition, the extensive experimental results indicate that our fabricated NO2 gas sensors exhibit high selectivities of 61.7, 42.8, and 54.4 dB for different target gases of H2, CH2O, and C6H6, respectively. These features will enable the mass fabrication of miniaturized, cost-effective, and highly robust gas sensor suitable for real-life application.
- Subjects :
- Materials science
Fabrication
business.industry
Analytical chemistry
Humidity
02 engineering and technology
Chemical vapor deposition
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
Temperature measurement
0104 chemical sciences
Electronic, Optical and Magnetic Materials
Nanomaterials
Electrochemical gas sensor
Surface-area-to-volume ratio
Optoelectronics
Electrical and Electronic Engineering
0210 nano-technology
business
Selectivity
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 37
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........d58d1bcb32e340983b6377883788b131
- Full Text :
- https://doi.org/10.1109/led.2015.2504260