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H-terminated Diamond Field Effect Transistor with Ferroelectric Gate Insulator

Authors :
Y. Mori
H. Furuichi
N. Tokuda
T. Nakajima
I. Baba
R. Karaya
T. Kawae
Source :
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
Publication Year :
2016
Publisher :
The Japan Society of Applied Physics, 2016.

Subjects

Subjects :
Materials science
business.industry
engineering
Optoelectronics
Diamond
Gate insulator
Field-effect transistor
engineering.material
business
Ferroelectricity

Details

Database :
OpenAIRE
Journal :
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials
Accession number :
edsair.doi...........d584b9abd2742048fb74723bbbeaee0a
Full Text :
https://doi.org/10.7567/ssdm.2016.e-4-04
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