Proposal of local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and 2-dimensional imaging of trap distribution in SiO2/SiC interface

Authors :: Yasunori Tanaka
Norimichi Chinone
Ryoji Kosugi
Shinsuke Harada
Hajime Okumura
Yasuo Cho
Source :: 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Publication Year :: 2016
Publisher :: IEEE, 2016.
Abstract: A new technique for microscopically evaluating insulator-semiconductor interface traps is proposed. The proposed technique is applied for SiO 2 /SiC stack structure and 2-dimensional imaging of interface traps is performed.

Database :: OpenAIRE
Journal :: 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Accession number :: edsair.doi...........d565667251b5da8ae2cbcd47c494837e
Full Text :: https://doi.org/10.1109/ipfa.2016.7564317

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