Investigation of the temperature dependences of the I-V characteristics of p-Si/MoOx selective contacts

In this article the temperature dependences of selective contacts based on MoOx were studied. The p-Si/MoOx/Al structure was fabricated. Current-voltage and capacitance-voltage characteristics in the temperature range from 80 to 300K were measured. Band diagram was also calculated to reveal potential barriers location and its influence on charge carrier transport.