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AlGaInAs/InP-epitaxy for long wavelength vertical-cavity surface-emitting lasers
- Source :
- Journal of Crystal Growth. :319-323
- Publication Year :
- 2001
- Publisher :
- Elsevier BV, 2001.
-
Abstract
- Recently, we demonstrated InP-based VCSELs at 1.5 μm with record device performance, achieving low threshold currents ( 1 mW) at room temperature and under continuous wave conditions (Ortsiefer et al., Appl. Phys. Lett. 76 (2000) 2179). In this presentation, we describe the epitaxial growth methods applied for the realization of these high-performance devices. For growing suitable device structures, a very good reproducibility of device parameters, such as the center wavelength of the distributed Bragg reflector, the emission wavelength of the active region and the lasing mode, as well as the possibility to fabricate new tailored devices without great effort are required. An in-situ control technique using the standard pyrometer is a simple and efficient method to monitor growth rates and to enable an in-situ adjustment of growth parameters for the control of lattice matching and layer thicknesses. Using this technique, VCSELs in the 1.5–1.8 μm wavelength range with excellent performance have been fabricated.
- Subjects :
- Materials science
business.industry
Condensed Matter Physics
Distributed Bragg reflector
Vertical-cavity surface-emitting laser
Semiconductor laser theory
Inorganic Chemistry
Wavelength
Optics
Distributed Bragg reflector laser
Materials Chemistry
Optoelectronics
Continuous wave
business
Lasing threshold
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 00220248
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........d551efe67e1064bc79e129ea68ae4a40