Nonmetallic localization and interaction in one-dimensional (0.1 μm) Si MOSFETs

We have fabricated Si MOSFETs having parallel arrays of narrow (0.1 μm) conducting channels. We observe a divergent, nonmetallic decrease of conductance below 30 K that is in excellent quantitative agreement with the one-dimensional version of the combined theories for weak localization and interaction effects. We also observe structure in the conductance as a function of gate voltage that we attribute to random variations of the density of states, rather than the regular variations expected for simple one-dimensional quantization.