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Metamorphosis of InP self-organized islands and the two-dimensional distribution modified by mismatched GaInP buffer layers
- Source :
- Surface Science. 564:L257-L262
- Publication Year :
- 2004
- Publisher :
- Elsevier BV, 2004.
-
Abstract
- The self-organized InP islands grown on GaInP buffer layers mismatched to GaAs substrate were utilized to find the influence of the stress between the buffer layers and the islands on the shape of the islands and its distribution. The shape of the islands was elongated with the increasing stress. The self-organized islands at the surface of buffer layers were analyzed by scaling theories to show a periodical distribution. Some kinds of buffer layers such as the mismatched GaInP on the GaAs (1 0 0) tilt to (1 1 1) 15° can improve the periodicity of the island separation distribution.
- Subjects :
- business.industry
Chemistry
Surface stress
Surfaces and Interfaces
Substrate (electronics)
Chemical vapor deposition
Condensed Matter Physics
Buffer (optical fiber)
Surfaces, Coatings and Films
Stress (mechanics)
chemistry.chemical_compound
Optics
Materials Chemistry
Indium phosphide
Optoelectronics
Metalorganic vapour phase epitaxy
business
Scaling
Subjects
Details
- ISSN :
- 00396028
- Volume :
- 564
- Database :
- OpenAIRE
- Journal :
- Surface Science
- Accession number :
- edsair.doi...........d4bf77e7e870b50c47b6fba79483c94b