Back to Search
Start Over
High performance back-illuminated MIS structure AlGaN solar-blind ultraviolet photodiodes
- Source :
- Journal of Materials Science: Materials in Electronics. 29:9077-9082
- Publication Year :
- 2018
- Publisher :
- Springer Science and Business Media LLC, 2018.
-
Abstract
- A back-illuminated metal–insulator–semiconductor (MIS) structure AlGaN-based solar-blind ultraviolet photodiode is demonstrated for the purpose of overcoming the technical bottleneck caused by high Al content p-AlGaN in p–i–n structure. The device presents a peak responsivity of 0.115 A/W at 270 nm, corresponding to an external quantum efficiency (EQE) of 53% and an ultraviolet/visible rejection ratio of more than three orders of magnitude under zero-bias. Moreover, a response speed around 24 µs and a peak responsivity of 0.154 A/W, corresponding to an EQE of 70.6% will be achieved at a reverse bias of 3 V. The excellent performances of the back-illuminated MIS photodetector can be attributed to the adoption of a thin n-AlGaN layer of Al content gradient which plays a role of completely relaxing the strain of light absorption layer and the introduction of a homogeneous n-AlGaN interlayer into light absorption region which redistributes its electric field in favor of the separation and transport of the photo-generated carriers.
- Subjects :
- Materials science
Orders of magnitude (temperature)
Photodetector
02 engineering and technology
medicine.disease_cause
01 natural sciences
law.invention
Responsivity
law
Electric field
0103 physical sciences
medicine
Electrical and Electronic Engineering
010302 applied physics
business.industry
021001 nanoscience & nanotechnology
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Photodiode
Optoelectronics
Quantum efficiency
0210 nano-technology
business
Layer (electronics)
Ultraviolet
Subjects
Details
- ISSN :
- 1573482X and 09574522
- Volume :
- 29
- Database :
- OpenAIRE
- Journal :
- Journal of Materials Science: Materials in Electronics
- Accession number :
- edsair.doi...........d4b3b7ea7194bb600c53a0bbdf5f2f03