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Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

Authors :
Zhimeng Cai
Jinzhong Yu
Cheng Li
Songyan Chen
Zhiwen Zhou
Hongkai Lai
Source :
Applied Surface Science. 255:2660-2664
Publication Year :
2008
Publisher :
Elsevier BV, 2008.

Abstract

National Natural Science Foundation of China [60676027, 50672079]; Key Projects of Fujian Science and Technology [2006H0036]; National Basic Research Program of China (973 Program) [2007CB613404]; New Century Excellent Talents in University

Subjects

Subjects :
Materials science
Basic research
General Physics and Astronomy
Relaxation (physics)
Nanotechnology
Surfaces and Interfaces
General Chemistry
Substrate (electronics)
Condensed Matter Physics
Science, technology and society
Engineering physics
Layer (electronics)
Surfaces, Coatings and Films

Details

ISSN :
01694332 and 60676027
Volume :
255
Database :
OpenAIRE
Journal :
Applied Surface Science
Accession number :
edsair.doi...........d4718d6ea35b73f780c6dbb9d71376f3
Full Text :
https://doi.org/10.1016/j.apsusc.2008.07.179
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