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Electrical characteristics of thin Ta2O5 films deposited by reactive pulsed direct-current magnetron sputtering
- Source :
- Journal of Applied Physics. 87:1448-1452
- Publication Year :
- 2000
- Publisher :
- AIP Publishing, 2000.
-
Abstract
- Room temperature deposition of tantalum oxide films on metallized silicon substrates was investigated by reactive pulsed magnetron sputtering of Ta in an Ar/O2 ambient. The dielectric constant of the tantalum oxide ranged from 19 to 31 depending on the oxygen percentage [P(%)=PO2/(PO2+PAr)] used during sputtering. The leakage current density was less than 10 nA/cm2 at 0.5 MV/cm electric field and the dielectric breakdown field was greater than 3.8 MV/cm for P=60%. A charge storage as high as 3.3 μF/cm2 was achieved for 70-A-thick film. Pulse frequency variation (from 20 to 200 kHz) did not give a significant effect in the electrical properties (dielectric constant or leakage current density) of the Ta2O5 films.
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 87
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........d3adebf9576737e76430518c2f7f1462