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Scavenging Segregated Ge on Thin Single-Crystal Si Epitaxially Grown on Ge
- Source :
- ACS Applied Electronic Materials. 3:4484-4489
- Publication Year :
- 2021
- Publisher :
- American Chemical Society (ACS), 2021.
Details
- ISSN :
- 26376113
- Volume :
- 3
- Database :
- OpenAIRE
- Journal :
- ACS Applied Electronic Materials
- Accession number :
- edsair.doi...........d3a8494c100550e2cb1f10237e7706f5
- Full Text :
- https://doi.org/10.1021/acsaelm.1c00623