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The behavior of photoluminescence from SiC:Tb films deposited on porous silicon substrate
- Source :
- Acta Physica Sinica. 53:2694
- Publication Year :
- 2004
- Publisher :
- Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, 2004.
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Abstract
- The SiC:Tb films were deposited on porous silicon substrate by rfsputtering. The samples prepared were annealed in N2 atmosphere at different temperatures, and Fourier transform infrared has been used to characterize the structure of them. We observed a strong photoluminescence(PL) spectrum at room temperature in the ultraviolet(UV) and visible regions. We found that the UV emission has obvious changed and a slight blue shift was observed with the change of annealing temperature. The UV and visible PLs were attributed to oxygen deficit center(ODC) and Tb3+ respectively.
Details
- ISSN :
- 10003290
- Volume :
- 53
- Database :
- OpenAIRE
- Journal :
- Acta Physica Sinica
- Accession number :
- edsair.doi...........d36ffcf269dadf134669b5b07b0999e6