Structure and electrical properties of Pb(Zr0.25Ti0.75)O3 thin films on LaNiO3—Coated thermally oxidized Si substrates

Pb(Zr0.25Ti0.75)O3 (PZT25) thin films were prepared on LaNiO3-coated thermally oxidized silicon substrates by chemical solution deposition method, where LaNiO3 electrodes were also prepared by a chemical solution deposition technique. The dielectric constant and dielectric loss of the PZT25 thin films were 570 and 0.057, respectively. The remanent polarization and coercive field were 20.11 μC/cm2 and 60.7 kV/cm, respectively. The PZT25 thin films on LaNiO3-coated thermally oxidized silicon substrates showed improved fatigue characteristics compared with their counterparts on plantium-coated silicon substrates.