Back to Search
Start Over
Analysis of damage during InP hydrocarbon-RIE
- Source :
- LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.
- Publication Year :
- 2003
- Publisher :
- IEEE, 2003.
-
Abstract
- The authors report a detailed determination of the structure of damage formed by CH/sub 4/-RIE (reactive ion etching) of InP, using a combination of three different characterization techniques for chemical, physical, and optical properties. X-ray photoelectron spectroscopy (XPS) and Rutherford back scattering (RBS) techniques were employed for the characterization of the chemical and physical structure of the damage. Photoluminescence (PL) measurement was performed at 4.2 K for optical characterization. The results obtained demonstrate the layered structure of the damage and also indicate the recovery of optical damage due to hydrogen passivation and high-temperature annealing. >
Details
- Database :
- OpenAIRE
- Journal :
- LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels
- Accession number :
- edsair.doi...........d32b5c1ab54da7e64905492253246a11
- Full Text :
- https://doi.org/10.1109/iciprm.1992.235573