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Investigation on post annealed copper sulfide thin films from photochemical deposition technique
- Source :
- Materials Science in Semiconductor Processing. 26:155-161
- Publication Year :
- 2014
- Publisher :
- Elsevier BV, 2014.
-
Abstract
- Cu x S thin films were deposited on glass substrates at room temperature by photochemical deposition after 1 h photo irradiation using the precursor solution containing copper sulphate pentahydrate (CuSO 4 ·5H 2 O), sodium thiosulphate (Na 2 S 2 O 3 ) as a source material for Copper and Sulphur respectively and Di Sodium salt of EDTA as a chelating agent in acidic medium (pH~3.0). The as deposited and annealed Cu x S thin films were investigated using XRD, UV–vis, AFM, SEM and Hall measurements. The deposited thin films were annealed at temperature up to 400 °C for 1 h. Above 200 °C the deposited film of Cu x S changes from anilite phase (Cu 1.75 S) to digenite (Cu 1.8 S) phase. The reduction in sulphur content of the films is evident in the EDX analysis. From the Hall Effect results as deposited and annealed films show p-type conductivity with increasing bulk concentration. Analyses of the optical bandgap of the films indicate an indirect bandgap between 1.75 and 2.35 eV.
- Subjects :
- Materials science
Annealing (metallurgy)
Band gap
Mechanical Engineering
Inorganic chemistry
chemistry.chemical_element
engineering.material
Conductivity
Condensed Matter Physics
Digenite
Copper
Copper sulfide
chemistry.chemical_compound
chemistry
Mechanics of Materials
Hall effect
engineering
General Materials Science
Thin film
Nuclear chemistry
Subjects
Details
- ISSN :
- 13698001
- Volume :
- 26
- Database :
- OpenAIRE
- Journal :
- Materials Science in Semiconductor Processing
- Accession number :
- edsair.doi...........d2ff7a439c459da6dc84a5b85e64d6ec