Application of magnetic neutral loop discharge plasma to SiO2 etching process

The applicability of the NLD plasma etching apparatus to the 0.1 μm wafer process was verified through the experiments. The uniformity of the SiO 2 etch rate was obtained within 1.6% (3% as 3 σ value) on 200 mm wafer, by applying a functional current to the magnetic coil with 0.1 Hz. A super-fine trench pattern with 20 nm width and 800 nm depth was also successfully fabricated with an electron beam resist mask in a C 4 F 8 +CH 2 F 2 plasma at 0.3 Pa.