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Synthesis of n-type semiconductor diamond single crystal under high pressure and high temperature
- Source :
- IOP Conference Series: Materials Science and Engineering. 274:012131
- Publication Year :
- 2017
- Publisher :
- IOP Publishing, 2017.
-
Abstract
- In this paper, diamond single crystal co-doped with sulfur and boron was successfully synthesized at the fixed pressure of 6.0 GPa and temperature range of 1535 K. Sulfur was detected in the co-doped diamond by Fourier Transform Infrared Spectroscopy (FTIR) and the corresponding characteristic peak located at 848 cm-1. Interestingly, Hall effect measurements indicated that the diamond co-doped with sulfur and boron exhibited n-type semiconductor behaviour. Furthermore, the Hall mobility and carrier concentration of the co-doped diamond higher than those of the boron-doping diamond.
- Subjects :
- Materials science
business.industry
Analytical chemistry
Infrared spectroscopy
chemistry.chemical_element
Diamond
02 engineering and technology
General Medicine
engineering.material
021001 nanoscience & nanotechnology
01 natural sciences
Semiconductor
chemistry
Hall effect
0103 physical sciences
engineering
Fourier transform infrared spectroscopy
010306 general physics
0210 nano-technology
business
Boron
Single crystal
Extrinsic semiconductor
Subjects
Details
- ISSN :
- 1757899X and 17578981
- Volume :
- 274
- Database :
- OpenAIRE
- Journal :
- IOP Conference Series: Materials Science and Engineering
- Accession number :
- edsair.doi...........d2abd122bbacb028f24ded6d2738c7db