On the Microscopic Theory of the Resonant Nonlinear Refractive Index of InSb

A new version is presented for the microscopic theory of the resonant intensity dependence of the refractive index of a narrow gap zincblende semiconductor InSb. A general formula is derived to include the contributions from both the mechanisms: the free charge carrier plasma and the dynamical Burstein-Moss effect. The electron and hole distribution functions are determined by means of the transport equation. [Russian Text Ignored.]