Defects in SiC substrates and epitaxial layers affecting semiconductor device performance

MLA

D.P. Malta, et al. “Defects in SiC Substrates and Epitaxial Layers Affecting Semiconductor Device Performance.” The European Physical Journal Applied Physics, vol. 27, July 2004, pp. 29–35. EBSCOhost, https://doi.org/10.1051/epjap:2004085.

APA

D.P. Malta, Adrian Powell, C. H. Carter, St. G. Müller, H. McD. Hobgood, V. F. Tsvetkov, Scott Allen, John W. Palmour, Robert Tyler Leonard, M.F. Brady, Michael James Paisley, R.C. Glass, Jason Ronald Jenny, Joseph John Sumakeris, & Mrinal K. Das. (2004). Defects in SiC substrates and epitaxial layers affecting semiconductor device performance. The European Physical Journal Applied Physics, 27, 29–35. https://doi.org/10.1051/epjap:2004085

Chicago

D.P. Malta, Adrian Powell, C. H. Carter, St. G. Müller, H. McD. Hobgood, V. F. Tsvetkov, Scott Allen, et al. 2004. “Defects in SiC Substrates and Epitaxial Layers Affecting Semiconductor Device Performance.” The European Physical Journal Applied Physics 27 (July): 29–35. doi:10.1051/epjap:2004085.