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Dependence of the binding energy of A(+) centers on quantum-well width in GaAs/AlGaAs structures
- Source :
- Semiconductors. 37:1090-1092
- Publication Year :
- 2003
- Publisher :
- Pleiades Publishing Ltd, 2003.
-
Abstract
- The luminescence of GaAs/AlGaAs multiple-quantum-well structures with different well widths, containing A(+) centers, was studied to determine the dependence of the center binding energy on quantum-well width. It is shown that the binding energy of the A(+) centers increases markedly with decreasing well width, becoming ten times greater in 10-nm-wide wells than in the bulk material. The binding energy of A(+) centers was found to depend on their concentration.
- Subjects :
- Condensed Matter::Quantum Gases
Condensed matter physics
Condensed Matter::Other
Chemistry
Binding energy
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
stomatognathic diseases
Electromagnetism
Magnet
Atomic physics
Luminescence
Gaas algaas
Quantum well
Subjects
Details
- ISSN :
- 10906479 and 10637826
- Volume :
- 37
- Database :
- OpenAIRE
- Journal :
- Semiconductors
- Accession number :
- edsair.doi...........d1cda6c65c33b6ec76ab238f2764cc25