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Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1
- Source :
- Japanese Journal of Applied Physics. 62:SF1010
- Publication Year :
- 2023
- Publisher :
- IOP Publishing, 2023.
-
Abstract
- In this work, we report on the realization of vertical (100) β-Ga2O3 FinFET devices for the use in power electronics applications. The experiments are carried out on structures consisting of highly conducting (100) β-Ga2O3 substrates with a doping concentration N D of 3 × 1018 cm−3, and epitaxially grown layers with N D of 5 × 1016 cm−3 for the drift and channel region. The fabricated FinFET devices feature enhancement-mode properties with a threshold voltage of +4.2 V and on/off-current ratio of 105. Moreover, breakdown measurements of these devices reveal an average breakdown strength of 2.7 MV cm−1. Additional device simulation indicates the presence of electric field peaks near the gate edge outside the active device as high as 7 and 5 MV cm−1 in the Al2O3 gate oxide and β-Ga2O3 semiconductor, respectively.
- Subjects :
- General Engineering
General Physics and Astronomy
Subjects
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 62
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........d1bd4a297e2681911bfd78e36f1f9724