Degradation and Regeneration of n +-Doped Poly-Si Surface Passivation on p-Type and n-Type Cz-Si Under Illumination and Dark Annealing

Degradation and regeneration of recombination parameters can occur in the bulk and at the surfaces of silicon solar cells. This article focuses on the time-resolved analysis of the recombination properties of textured 1.7 Ω cm boron-doped p -type Cz-Si and 5 Ω cm phosphorus-doped n -type Cz-Si wafers, where the surfaces are passivated by n + poly-Si on interfacial oxide layers exposed to a rapid thermal annealing (RTA) step in a conventional firing furnace. We observe a thermally activated instability in the lifetime over the entire examined injection range. Our experiments show that minority carrier injection (e.g., by illumination) is not required. Degradation in the surface passivation quality of the poly-Si on oxide layer—corresponding to an increase of the saturation current density J 0 by up to a factor of five—causes the degradation of the effective lifetime. Interestingly, the surface passivation fully regenerates under prolonged annealing and finally improves even beyond the initial state. Both the extent of the lifetime degradation and the change in J 0 depend on the postprocessing treatment temperature which we varied between 80 and 400 °C. Our results indicate that two different processes are responsible for the degradation and the regeneration. Reference samples which did not receive an RTA treatment show no degradation of the surface passivation quality. The RTA treatment applied therefore triggers the degradation effect. A large improvement of the surface passivation quality under prolonged annealing (e.g., at 400 °C) is observed for all samples examined in this study.