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Changes in the geometric structure and hydrogen-termination modify the electronic and optical properties of porous silicon
- Source :
- Optik. 224:165539
- Publication Year :
- 2020
- Publisher :
- Elsevier BV, 2020.
-
Abstract
- Here, we show that the electronic and optical properties of silicon (Si) can be controlled by varying the amount of dangling bonds and the number of Si Si bonds in the system. By introducing pores in the bulk (in the form of Si vacancies), we can induce the appearance of gap states (states in the energy gap/forbidden region) in porous Si (pSi), as compared to pure Si. Terminating the Si atoms in the pores with hydrogen atoms (H) induces the disappearance of these induced gap states (IGS). As a result, we can continuously decrease (increase) the corresponding refractive indices of both pSi and H-terminated pSi by increasing (decreasing) the porosity.
- Subjects :
- Materials science
Hydrogen
Silicon
Band gap
Dangling bond
food and beverages
chemistry.chemical_element
02 engineering and technology
021001 nanoscience & nanotechnology
Porous silicon
01 natural sciences
Atomic and Molecular Physics, and Optics
Physics::Geophysics
Electronic, Optical and Magnetic Materials
010309 optics
chemistry
Chemical physics
0103 physical sciences
Electrical and Electronic Engineering
0210 nano-technology
Porosity
Refractive index
Subjects
Details
- ISSN :
- 00304026
- Volume :
- 224
- Database :
- OpenAIRE
- Journal :
- Optik
- Accession number :
- edsair.doi...........d0c3ff155d129682b6a6bd8617f6f3f7