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Crystal orientation effects of sapphire substrate on graphene direct growth by metal catalyst-free low-pressure CVD
- Source :
- Applied Physics Letters. 115:013103
- Publication Year :
- 2019
- Publisher :
- AIP Publishing, 2019.
-
Abstract
- Graphene was directly grown on r-plane (1-102), c-plane (0001), and a-plane (11-20) sapphires by low pressure chemical vapor deposition without the use of a metal catalyst. The growth temperature was systematically changed between 1090 and 1210 °C to investigate the effects of the crystal orientation of sapphire on the graphene growth. It was found that the growth rate of graphene on r-plane sapphire was very fast compared to that of the samples grown on other orientations. The surface catalytic effect of r-plane sapphire promotes the smooth and flat growth of single-layer graphene. The surface of the r-plane sapphire was kept smooth even at a high temperature of 1210 °C because a quick coverage of graphene protects the surface of the sapphire from thermal decomposition and roughening.
- Subjects :
- 010302 applied physics
Materials science
Physics and Astronomy (miscellaneous)
Graphene
Thermal decomposition
Crystal orientation
02 engineering and technology
Chemical vapor deposition
021001 nanoscience & nanotechnology
01 natural sciences
law.invention
Catalysis
Chemical engineering
law
0103 physical sciences
Sapphire
Metal catalyst
Growth rate
0210 nano-technology
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 115
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........d09eed46edad2e392ca66992e218bec5