Modulation of the band structure in bilayer zigzag graphene nanoribbons on hexagonal boron nitride using the force and electric fields

Modulation of semiconductor–halfmetal–metal transition in the antiferromagnetic (AF) ordering of bilayer zigzag graphene nanoribbons (BZGNRs) on hexagonal boron nitride (h-BN) heterostructure using the external force field F ext and transverse electric fields E ext (in the presence of interaction with the substrate) was performed within the framework of the density functional theory (DFT). We established critical values of E ext and interlayer distance in the bilayer providing for semiconductor–halfmetal–metal transition in one of electron spin configurations. Our calculations also show that the energy gap E g in the AF-BZGNR/h-BN(0001) heterostructure can be controlled in a wide range of the F ext and E ext . This makes the AF-8-ZGNR/h-BN(0001) heterostructure being potentially promising for application in spintronic devices.