4.5 kV Double-gate RC-IEGT with Hole Control Gate

Authors :: Ryohei Gejo
Tatsunori Sakano
Akiyo Kawakami
Takahiro Kato
Shigeaki Hayase
Tomoaki Inokuchi
Kazuto Takao
Source :: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Publication Year :: 2022
Publisher :: IEEE, 2022.

Database :: OpenAIRE
Journal :: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Accession number :: edsair.doi...........d0954b909404f77daa1987c1bb87f42c
Full Text :: https://doi.org/10.1109/ispsd49238.2022.9813647