The role of inelastic processes in the temperature dependence of hall induced resistance oscillations

We develop a model of magnetoresistance oscillations induced by the Hall field in order to study the temperature dependence observed in recent experiments in two dimensional electron systems. The model is based on the solution of the von Neumann equation incorporating the exact dynamics of two-dimensional damped electrons in the presence of arbitrarily strong magnetic and dc electric fields, while the effects of randomly distributed neutral and charged impurities are perturbatively added. Both the effects of elastic impurity scattering as well as those related to inelastic processes play an important role. The theoretical predictions correctly reproduce the experimentally observed oscillations amplitude, provided that the quantum inelastic scattering rate obeys a T 2 temperature dependence, consistent with electron–electron interaction effects.