Study of SiO2 Films Prepared by Electron Cyclotron Resonant Microwave Plasma

Microwave electron cyclotron resonance plasma enhanced chemical vapor deposition was used to grow silicon dioxide films on crystalline silicon substrate for planar optical waveguides. The relationship between plasma parameters and deposition rates was investigated, and the influence of radio frequency substrate bias on properties of SiO2 films was also preliminarily studied. X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, scanning electron microscopy, atomic force microscopy and ellipsometry were used to characterize the deposited films, showing that SiO2 films with good structural and optical properties prepared at low temperature have been achieved. They can basically meet the requirements of integrated optical waveguides.