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Correlation between Surface Microroughness of Silicon Oxide Film and SiO2/Si Interface Structure
- Source :
- Japanese Journal of Applied Physics. 36:L397
- Publication Year :
- 1997
- Publisher :
- IOP Publishing, 1997.
-
Abstract
- It was found, from combined measurements of the surface microroughness of silicon oxide film and the SiO2/Si interface structure, that the surface microroughness of thermal oxide film formed on a Si(111) surface changes periodically with the progress of oxidation in accordance with periodic changes in interface structures. Therefore, the changes in interface structures can be detected by measuring the oxidation-induced surface microroughness.
- Subjects :
- Surface (mathematics)
Silicon
business.industry
Atomic force microscopy
General Engineering
Analytical chemistry
General Physics and Astronomy
chemistry.chemical_element
Heterojunction
chemistry
X-ray photoelectron spectroscopy
Thermal oxide
Optoelectronics
sense organs
Thin film
skin and connective tissue diseases
business
Silicon oxide
Subjects
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 36
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........cfc8d1ddd978aa783f4abf39a907e65b