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Self-organized Bi-rich grain boundary precipitates for realizing steep magnetic-field-driven metamagnetic transition in Bi-doped Mn2Sb

Authors :
Zhishuo Zhang
Hai Zeng
Zhenchen Zhong
Sajjad Ur Rehman
Yongfeng Hu
Xianming Zheng
Xiaohua Luo
Feng Xu
Yuxi Zhang
Shengcan Ma
Guang Yu
Changcai Chen
Source :
Acta Materialia. 200:835-847
Publication Year :
2020
Publisher :
Elsevier BV, 2020.

Abstract

In the present work, we reveal a novel finding, that is, self-assembled grain boundary precipitates for realizing the magnetic-field-induced metamagnetic transition by employing low melting point metal in materials. This strategy has been experimentally verified in a well-established ferrimagnetic compound Mn2Sb by doping the bismuth (Bi) element with a low melting point of just 271.3°C. Bi solidifies later than the Mn2(Sb,Bi) main phase in (Mn2Sb)1-xBix system (the melting point of ~948°C for Mn2Sb), and aggregates spontaneously along the grain boundaries, forming Bi-rich grain boundary precipitates to coat main phase grains. This is very similar to the Nd-rich grain boundary phase in Nd-Fe-B permanent magnets. The fraction of Bi-rich grain boundary phase can be controlled by Bi-content. As a result, the magnetic field induced steep magnetoelastic transition from antiferromagnetic to ferrimagnetic is achieved in (Mn2Sb)0.89Bi0.11 alloy with giant multiple functional properties in Bi-doped Mn2Sb. Especially, the magnetic entropy change maximum nearly quadruples when Bi-doping increases from 0.03 to 0.11. Giant negative magnetoresistance of more than 65% under μ0∆H = 0–5 T, and magnetostrain of ~1802 ppm under μ0H = 8.5 T are obtained in (Mn2Sb)0.89Bi0.11. It should pave a way to achieve the magnetic transition and enhance the magnetoresponsive effects in designing similar coherent materials by employing low melting point metal doping to form the dual-phase heterogeneous structure.

Details

ISSN :
13596454
Volume :
200
Database :
OpenAIRE
Journal :
Acta Materialia
Accession number :
edsair.doi...........cfbcc6f29f96f1eeb234392b660ab512
Full Text :
https://doi.org/10.1016/j.actamat.2020.09.050