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Nanoscale engineering of photoelectron processes by charging quantum dots

Authors :
Andrei Sergeev
Kimberly Sablon
Nizami Vagidov
John W. Little
Vladimir Mitin
Source :
2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO).
Publication Year :
2012
Publisher :
IEEE, 2012.

Abstract

Novel approach to control of photoelectron processes is based on nanoscale engineering of 3D potential profile employing quantum dots with built-in charge (Q-BIC). Charging of quantum dots creates local potential barriers around single dots, if dots are arbitrary distributed in the medium, and collective barriers around dot clusters, rows etc, if quantum dots form specific structures. Manipulations with potential barriers provide an effective tool for suppression of fast capture processes of photocarriers by quantum dots. This allows one to increase the photocarrier lifetime and to reduce the recombination losses. The charging of dots also enhances the electron coupling to infrared radiation and multi-step absorption of sub-gap photons. Q-BIC nanomaterials have a number of attractive features to be used in photovoltaic and sensing applications.

Details

Database :
OpenAIRE
Journal :
2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO)
Accession number :
edsair.doi...........cfb1dad85ad7ae44d71b7d43eb1755a3
Full Text :
https://doi.org/10.1109/nano.2012.6322075