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COMPOSITE -- A Complete Modeling Program of Silicon Technology
- Source :
- IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 4:421-430
- Publication Year :
- 1985
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1985.
-
Abstract
- A new two-dimensional process modeling program written in Fortran is described. For the first time, this program allows the simulation of all important processing steps occurring in typical sequences involved in the fabrication of integrated circuits such as doping, oxidation, lithography, etching, and layer deposition. The program possesses a modular structure to allow for easy changing and improvement of process models as well as of mathematical procedures. The program is menu driven to make it easy to use for non-experts and it is readily usable with different computer systems.
- Subjects :
- Engineering drawing
Fabrication
Process modeling
Silicon
Computer science
Doping
chemistry.chemical_element
Integrated circuit
Computer Graphics and Computer-Aided Design
law.invention
chemistry
Etching (microfabrication)
law
Etching
Hardware_INTEGRATEDCIRCUITS
Electronic engineering
Electrical and Electronic Engineering
Layer (object-oriented design)
Lithography
Software
Subjects
Details
- ISSN :
- 19374151 and 02780070
- Volume :
- 4
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Accession number :
- edsair.doi...........cf52fb1c81ac94c09c1f370aaf058494