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Scanning tunneling spectroscopy on the 6H−SiC(0001)(3 × 3) surface
- Source :
- Europhysics Letters (EPL). 51:527-533
- Publication Year :
- 2000
- Publisher :
- IOP Publishing, 2000.
-
Abstract
- Surface topographic (STM) and spectroscopic (STS) studies have been performed on the Si−terminated 6H-SiC(0001)(3 × 3) surface using a scanning tunneling microscope (STM) in ultrahigh vacuum. High-quality (3 × 3) overstructures have been prepared as observed by LEED and STM. The regular (3 × 3) surface sites revealed much weaker I(V) dependences as compared to the defect sites when measured using the constant tip-surface gap technique. The normalized (dI/dV)/(I/V) vs. V spectra exhibit distinct bands of empty and filled states, which are separated by 1.2 eV for both surface sites, respectively. The results thereby support a Mott-Hubbard-type model as used for the calculation of the density of states. However, the STS spectra become completely featureless in the range of small tip-surface distances and reveal a "metallic"-like Ohmic I-V dependence.
- Subjects :
- Range (particle radiation)
Materials science
Scanning tunneling spectroscopy
Analytical chemistry
General Physics and Astronomy
Spectral line
law.invention
Metal
law
visual_art
Density of states
visual_art.visual_art_medium
Scanning tunneling microscope
Atomic physics
Ohmic contact
Surface states
Subjects
Details
- ISSN :
- 12864854 and 02955075
- Volume :
- 51
- Database :
- OpenAIRE
- Journal :
- Europhysics Letters (EPL)
- Accession number :
- edsair.doi...........cf4aa3a1ac3da11976593ccb868d98a6