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Channel temperature measurements of InxAl1−xN/GaN high electron mobility transistors on Si(111) using optical spectroscopy
- Source :
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33:051203
- Publication Year :
- 2015
- Publisher :
- American Vacuum Society, 2015.
-
Abstract
- The temperature profiles of InxAl1−xN/GaN high electron mobility transistors (HEMTs) were investigated using nondestructive optical spectroscopic techniques. In this study, HEMT structures were epitaxially grown on a Si(111) substrate with a diameter of 200 mm. In particular, the channel temperature underneath the gate was able to be accurately probed by using a RuOx-based semitransparent Schottky contact in the ultraviolet photoluminescence (PL) and visible Raman excitation modes. A maximum channel temperature as high as ∼475 K was probed near the gate edge using the PL technique at a power dissipation of ∼11.6 W/mm, thus leading to a minimum thermal conductance of about 64.7 Wm−1K−1 in such a HEMT structure. Furthermore, the temperature profiles at the GaN buffer and AlN/Si(111) interface were determined using micro-Raman measurements.
- Subjects :
- Photoluminescence
Materials science
business.industry
Process Chemistry and Technology
Schottky barrier
Wide-bandgap semiconductor
Substrate (electronics)
High-electron-mobility transistor
Epitaxy
Temperature measurement
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
symbols.namesake
Materials Chemistry
symbols
Optoelectronics
Electrical and Electronic Engineering
business
Raman spectroscopy
Instrumentation
Subjects
Details
- ISSN :
- 21662754 and 21662746
- Volume :
- 33
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
- Accession number :
- edsair.doi...........cf2e2e5d9dee51911c6aca47ce18e912