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Channel temperature measurements of InxAl1−xN/GaN high electron mobility transistors on Si(111) using optical spectroscopy

Authors :
Surani Bin Dolmanan
Thirumaleshwara N. Bhat
Yi Liu
Sukant K. Tripathy
Eng Fong Chor
Hui Ru Tan
Lakshmi Kanta Bera
Lwin Min Kyaw
Source :
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33:051203
Publication Year :
2015
Publisher :
American Vacuum Society, 2015.

Abstract

The temperature profiles of InxAl1−xN/GaN high electron mobility transistors (HEMTs) were investigated using nondestructive optical spectroscopic techniques. In this study, HEMT structures were epitaxially grown on a Si(111) substrate with a diameter of 200 mm. In particular, the channel temperature underneath the gate was able to be accurately probed by using a RuOx-based semitransparent Schottky contact in the ultraviolet photoluminescence (PL) and visible Raman excitation modes. A maximum channel temperature as high as ∼475 K was probed near the gate edge using the PL technique at a power dissipation of ∼11.6 W/mm, thus leading to a minimum thermal conductance of about 64.7 Wm−1K−1 in such a HEMT structure. Furthermore, the temperature profiles at the GaN buffer and AlN/Si(111) interface were determined using micro-Raman measurements.

Details

ISSN :
21662754 and 21662746
Volume :
33
Database :
OpenAIRE
Journal :
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Accession number :
edsair.doi...........cf2e2e5d9dee51911c6aca47ce18e912