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The Field Modulation Effect of a Fluoride Plasma Treatment on the Blocking Characteristics of AlGaN/GaN High Electron Mobility Transistors
- Source :
- Transactions on Electrical and Electronic Materials. 12:148-151
- Publication Year :
- 2011
- Publisher :
- The Korean Institute of Electrical and Electronic Material Engineers, 2011.
-
Abstract
- We designed and fabricated aluminium gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) with stable reverse blocking characteristics established by employing a selective fluoride plasma treatment on the drainside gate edge region where the electric field is concentrated. Implanted fluoride ions caused a depolarization in the AlGaN layer and introduced an extra depletion region. The overall contour of the depletion region was expanded along the drift region. The expanded depletion region distributed the field more uniformly and reduced the field intensity peak. Through this field modulation, the leakage current was reduced to 9.3 nA and the breakdown voltage (V(BR)) improved from 900 V to 1,400 V.
- Subjects :
- Materials science
business.industry
Transistor
Analytical chemistry
Gallium nitride
High-electron-mobility transistor
Electronic, Optical and Magnetic Materials
law.invention
chemistry.chemical_compound
Depletion region
chemistry
law
Electric field
Aluminium gallium nitride
Optoelectronics
Breakdown voltage
Electrical and Electronic Engineering
business
Fluoride
Subjects
Details
- ISSN :
- 12297607
- Volume :
- 12
- Database :
- OpenAIRE
- Journal :
- Transactions on Electrical and Electronic Materials
- Accession number :
- edsair.doi...........ceb05fa442d2fef95d05ccd14d418cc4