Diffusion-controlled effects of luminescent efficiency in InGaN/GaN light-emitting diodes

Authors :: N. C. Chen
Jenn-Fang Chen
Y. S. Wang
Source :: 2011 International Quantum Electronics Conference (IQEC) and Conference on Lasers and Electro-Optics (CLEO) Pacific Rim incorporating the Australasian Conference on Optics, Lasers and Spectroscopy and the Australian Conference on Optical Fibre Technology.
Publication Year :: 2011
Publisher :: IEEE, 2011.
Abstract: Temperature dependence of photoluminescence (PL) and time-resolved photoluminescence (TRPL) were used to investigate the recombination process in InGaN/GaN light-emitting diodes (LEDs). The results exhibited that the nonradiative recombination process can be explained by diffusion-controlled kinetic.

Subjects :: Materials science
Photoluminescence
business.industry
Wide-bandgap semiconductor
Indium gallium nitride
law.invention
chemistry.chemical_compound
chemistry
Quantum dot
law
Optoelectronics
Diffusion (business)
business
Luminescence
Diode
Light-emitting diode

Database :: OpenAIRE
Journal :: 2011 International Quantum Electronics Conference (IQEC) and Conference on Lasers and Electro-Optics (CLEO) Pacific Rim incorporating the Australasian Conference on Optics, Lasers and Spectroscopy and the Australian Conference on Optical Fibre Technology
Accession number :: edsair.doi...........ceabb6272f3e81221fc51a236674acdf

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